NCE3080K 30V 80A 3080K N-Channel MOSFET
TO-252
The NCE3080K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
RDS(ON) < 6.5mΩ @ VGS=10V
RDS(ON) < 10mΩ @ VGS=5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
